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        藍寶石襯底的全區域覆蓋的單層二硫化鉬

        簡要描述:Full Area Coverage Monolayer MoS2 on c-cut Sapphire
        This product contains full area coverage MoS2 monolayers on c-cut sapphire substrates.

        • 更新時間:2024-06-03
        • 產品型號:
        • 廠商性質:生產廠家
        • 訪  問  量:1205

        詳細介紹

        Full Area Coverage Monolayer MoS2 on c-cut Sapphire

        This product contains full area coverage MoS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.



        Sample Properties.

        Sample size

        1cm x 1cm square shaped

        Substrate type

        (0001) c-cut sapphire

        Coverage

        Full Coverage Monolayer

        Electrical properties

        1.85 eV Direct Bandgap Semiconductor

        Crystal structure

        Hexagonal Phase

        Unit cell parameters

        a = b = 0.313 nm, c = 1.230 nm,

        α = β = 90°, γ = 120°

        Production method

        Atmospheric Pressure Chemical Vapor Deposition (APCVD)

        Characterization methods

        Raman, photoluminescence, TEM, EDS

        Specifications

        1)    Identification. Full coverage 100% monolayer MoS2 uniformly covered across c-cut sapphire.

        2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

        3)    Smoothness. Atomically smooth surface with roughness < 0.15 nm.

        4)    Uniformity. Highly uniform surface morphology. MoS2 monolayers uniformly cover across the sample.

        5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

        6)    Reliability. Repeatable Raman and photoluminescence response

        7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

        8)    Substrate. c-cut Sapphire but our research and development team can transfer MoS2 monolayers onto variety of substrates including PET, quartz, and SiO2/Si without significant compromisation of material quality.

        9)    Defect profile. MoS2 monolayers do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

        Supporting datasets [for 100% Full area coverage on c-cut Sapphire]

        Transmission electron images (TEM) acquired from CVD grown full area coverage MoS2 monolayers on c-cut sapphire confirming highly crystalline nature of monolayers

         

        Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown full area coverage monolayer MoS2 on c-cut sapphire confirming Mo:S 1:2 ratios

         

        Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown full area coverage MoS2 monolayers on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.



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