單層氧化石墨烯（H法/進口） Single Layer Graphene Oxide (H Method) 制備方法：改良的H法 直徑：1~5um 厚度：0.8~1.2nm 單層比：99% 純度：99% 堆積密度：0.44g/cm3 體積密度：為0.26g/cm3

氧化石墨烯（S法/進口） Graphene Oxide (S Method) 制備方法：斯托登梅爾方法 外觀為灰綠色粉末 直徑：1~5um 厚度：0.8~1.2nm 比表面積（SSA）5-10平方米/克 單層比：＞90% 氧含量:~35 wt% 堆積密度：0.013g/cm3 體積密度：0.008g/cm3 XPS評估結果（元素重量比） C1s: 65.71% N1S: 0.5% O1s: 33.

氧化石墨烯（S法/進口） Graphene Oxide (S Method) 制備方法：斯托登梅爾方法 外觀為灰綠色粉末 直徑：1~5um 厚度：0.8~1.2nm 比表面積（SSA）5-10平方米/克 單層比：＞90% 氧含量:~35 wt% 堆積密度：0.013g/cm3 體積密度：0.008g/cm3 XPS評估結果（元素重量比） C1s: 65.71% N1S: 0.5% O1s: 33.

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density

Carboxyl (-COOH) functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.