13651969369
當(dāng)前位置：首頁 > 產(chǎn)品中心 > 二維材料 > 碲化物晶體 > Nb2SiTe4
簡要描述：Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers.
更新時間：2024-06-03產(chǎn)品型號： 廠商性質(zhì)：生產(chǎn)廠家訪 問 量：1283詳細(xì)介紹
Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.
產(chǎn)品咨詢
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號
郵箱：taizhou@sunano.com.cn
電話：021-56830191掃一掃以下二維碼了解更多信息
銷售微信咨詢
網(wǎng)站二維碼
歡迎來到