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簡要描述：ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers
更新時(shí)間：2024-06-03產(chǎn)品型號： 廠商性質(zhì)：生產(chǎn)廠家訪 問 量：1180詳細(xì)介紹
ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
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